A high-speed silicon single-electron random access memory

被引：6

作者：

Stone, NJ ^{[1
]}

Ahmed, I

Nakazato, K

机构：

[1] Cavendish Lab, Microelect Res Ctr, Cambridge CB3 OHE, England

[2] Univ Cambridge, Cavendish Lab, Hitachi Cambridge Lab, Cambridge CB3 0HE, England

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 11期

关键词：

D O I：

10.1109/55.798051

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A silicon random access memory using a single-electron tunnelling transistor (SETT) in the form of a multiple tunnel junction (MTJ) in a silicon nanowire has been assessed in terms of its write speed, retention time, and selectivity at an operating temperature of 4.2 K.

引用

页码：583 / 585

页数：3

共 7 条

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[2] SINGLE-ELECTRON MEMORY
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Ahmed, H
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[6] Tiwari S, 1996, APPL PHYS LETT, V68, P1377, DOI 10.1063/1.116085
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