Effects of the n+ etching process in TFT-LCD fabrication for Mo/Al/Mo data lines

被引：11

作者：

Choe, H ^{[1
]}

Kim, SG ^{[1
]}

机构：

[1] Samsung Elect, LCD Business, Proc Dev Team, LCD R&D Ctr, Yongin 449711, South Korea

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 07期

关键词：

D O I：

10.1088/0268-1242/19/7/010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The n(+) etching process is investigated for the fabrication of TFF-LCD (thin film transistor liquid crystal display) deposited with low resistance data lines of Mo/Al/Mo. Problems of consumption of the upper Mo layer and contamination of the channel area can be resolved using a PR mask. With a PR mask, either HCl or Cl-2 can be selected as a main etchant gas, and either SF6 or CF4 can be selected as an additive. Plasma treatment after the n(+) etching process can reduce the high off-current problem which occurs when the Mo data line is in contact with the n(+)a-Si layer.

引用

页码：839 / 845

页数：7

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