Back-channel-oxidized a-Si: H thin-film transistors

被引：17

作者：

Takechi, K ^{[1
]}

Hirano, N ^{[1
]}

Hayama, H ^{[1
]}

Kaneko, S ^{[1
]}

机构：

[1] NEC Corp Ltd, Funct Devices Res Labs, Miyamae Ku, Kawasaki, Kanagawa 216, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 07期

关键词：

D O I：

10.1063/1.368579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a back-channel-oxidized thin-film transistor (TFT) structure which does not require the conventional etching of the n(+)-a-Si:H layer from the channel region. Key processes in the fabrication of this structure are the deposition of a very thin (less than 10 nm) n(+)-a-Si:H layer 1 with low resistivity (similar to 50 Omega cm), and an oxygen plasma treatment to change the n(+)-a-Si:H layer above the channel region into dielectric oxide. With a thin (similar to 50 nm) a-Si:H layer, the back-channel-oxidized TFT structure makes it possible to obtain much better "ON'' characteristics than are obtained with conventional channel-etched TFTs. To gain insight into the underlying physical mechanism we investigated the back-channel electrical characteristics of both types of TFTs as a function of temperature, and found that back-channel-oxidized TFTs had much better back-channel characteristics than channel-etched TFTs, which is due to a lower density of back-channel interface states. (C) 1998 American Institute of Physics. [S0021-8979(98)04119-X].

引用

页码：3993 / 3999

页数：7

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