SILICON OXIDE FILMS GROWN IN A MICROWAVE DISCHARGE

被引：84

作者：

KRAITCHMAN, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 11期

关键词：

D O I：

10.1063/1.1709122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4323 / +

页数：1

相关论文

共 18 条

[1] BURKHARDT PJ, 1966, T METALL SOC AIME, V236, P299
[2] Cobine J.D., 1958, GASEOUS CONDUCTORS
[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
GROVE, AS
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &
[4] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM
DEAL, BE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 527 - 533
[5] Evans U. R., 1924, T ELECTROCHEM SOC, V46, P247
[6] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
DEAL, BE
SNOW, EH
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +
[7] FIELD EFFECT-CAPACITANCE ANALYSIS OF SURFACE STATES ON SILICON
LEHOVEC, K
SLOBODSKOY, A
SPRAGUE, JL
[J]. PHYSICA STATUS SOLIDI, 1963, 3 (03): : 447 - 464
[8] SILICON OXIDATION IN AN OXYGEN PLASMA EXCITED BY MICROWAVES
LIGENZA, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2703 - +
[9] SEMICONDUCTOR SURFACE VARACTOR
LINDNER, R
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (03): : 803 - +
[10] THE FORMATION OF METAL OXIDE FILMS USING GASEOUS AND SOLID ELECTROLYTES
MILES, JL
SMITH, PH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (12) : 1240 - 1245