Crystallographic and magneto-optical studies of nanoscaled MnSb dots grown on GaAs

被引:31
作者
Mizuguchi, M
Akinaga, H
Ono, K
Oshima, M
机构
[1] Natl Inst Adv Interdisciplinary Res, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 3058562, Japan
[2] Univ Tokyo, Grad Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan
[3] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
关键词
D O I
10.1063/1.126153
中图分类号
O59 [应用物理学];
学科分类号
摘要
MnSb ultrathin films with the nominal thickness of 0-1.40 nm were grown on sulfur passivated GaAs substrates by molecular beam epitaxy. Atomic force microscopy analysis showed that MnSb formed nanosize clusters on the substrate, and the coalescence of the clusters occurred at the nominal thickness between 0.70 and 1.05 nm. The intensity of the polar magnetic circular dichroism of MnSb clusters suddenly increased when the nominal thickness reached the critical value of 1.05 nm. The coalescence among the dots can be correlated with the sharp increase of the magnetic circular dichroism intensity. (C) 2000 American Institute of Physics. [S0003-6951(00)01013-5].
引用
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页码:1743 / 1745
页数:3
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