Magnetic tunnel junction field sensors with hard-axis bias field

被引：72

作者：

Liu, XY ^{[1
]}

Ren, C ^{[1
]}

Xiao, G ^{[1
]}

机构：

[1] Brown Univ, Dept Phys, Providence, RI 02912 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 08期

关键词：

D O I：

10.1063/1.1507818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated and studied the magnetic properties of the Ni81Fe19/Al2O3/Ni81Fe19 based magnetic tunnel junction sensors. Magnetoresistance (MR) of 35% is achieved with a small applied field (<10 Oe). The introduction of a hard axis bias field linearizes the MR response. The hysteresis disappears in hard-axis fields greater than 3 Oe, which corresponds to the effective anisotropy field along the easy axis. A sensitivity of 3.5%/Oe has been demonstrated in this linear region. Low-frequency noise measurements indicate that sensor noise is dominated by field-dependent 1/f noise caused by magnetization fluctuations. Finally, a noise level as low as 1 nT/Hz(1/2) has been obtained. (C) 2002 American Institute of Physics.

引用

页码：4722 / 4725

页数：4

共 19 条

[1] ENHANCED MAGNETORESISTANCE IN LAYERED MAGNETIC-STRUCTURES WITH ANTIFERROMAGNETIC INTERLAYER EXCHANGE [J].