Low-frequency magnetic noise in micron-scale magnetic tunnel junctions

被引：141

作者：

Ingvarsson, S ^{[1
]}

Xiao, G

Parkin, SSP

Gallagher, WJ

Grinstein, G

Koch, RH

机构：

[1] Brown Univ, Dept Phys, Providence, RI 02912 USA

[2] IBM Corp, Almaden Res Ctr, Div Res, San Jose, CA 95120 USA

[3] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.85.3289

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have observed low-frequency noise due to quasiequilibrium thermal magnetization fluctuations in micron-scale magnetic tunnel junctions (MTJs). This strongly field-dependent magnetic noise occurs within the magnetic hysteresis loops, either as 1/f or Lorentzian (random telegraph) noise. We attribute it to the thermally excited hopping of magnetic domain walls between pinning sites. Our results show that magnetic stability is a crucial factor in reducing the low-frequency noise in small MTJs.

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收藏

页码：3289 / 3292

页数：4

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