Optimisation of doped microcrystalline silicon films deposited at very low temperatures by hot-wire CVD

被引：33

作者：

Voz, C ^{[1
]}

Peiró, D ^{[1
]}

Bertomeu, J ^{[1
]}

Soler, D ^{[1
]}

Fonrodona, M ^{[1
]}

Andreu, J ^{[1
]}

机构：

[1] Univ Barcelona, Dept Fis Aplicada & Opt, E-08028 Barcelona, Spain

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 69卷

关键词：

microcrystalline silicon; hot-wire chemical vapour deposition; doping;

D O I：

10.1016/S0921-5107(99)00308-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we present new results on doped mu c-Si:H thin films deposited by hot-wire chemical vapour deposition (HWCVD) in the very low temperature range (125-275 degrees C). The doped layers were obtained by the addition of diborane or phosphine in the gas phase during deposition. The incorporation of boron and phosphorus in the films and their influence on the crystalline fraction are studied by secondary ion mass spectrometry and Raman spectroscopy, respectively. Good electrical transport properties were obtained in this deposition regime, with best dark conductivities of 2.6 and 9.8 S cm(-1) for the p- and n-doped films, respectively. The effect of the hydrogen dilution and the layer thickness on the electrical properties are also studied. Some technological conclusions referred to cross contamination could be deduced from the nominally undoped samples obtained in the same chamber after p- and n-type heavily doped layers. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：278 / 283

页数：6

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