The surface structure of a II-VI compound: CdTe

被引：8

作者：

Cibert, J

Tatarenko, S

机构：

[1] CNRS,SPECTROMETRIE PHYS LAB,F-38402 ST MARTIN DHER,FRANCE

[2] UNIV GRENOBLE 1,F-38402 ST MARTIN DHER,FRANCE

来源：

DEFECT AND DIFFUSION FORUM | 1997年 / 150卷

关键词：

D O I：

10.4028/www.scientific.net/DDF.150-151.1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The CdTe surface structure is reviewed for the different orientations, (001), (111)A, (111)B, (110), and (112). Many experimental methods have been applied in order to understand the stoichiometry, reconstructions, relaxation, morphology, dynamics and electronic structure of these surfaces, and the consequences for epitaxial growth. A reasonable description is obtained using the same basic mechanisms as for more covalent semiconductors, but with some modifications related to the higher ionicity of this II-VI compound.

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页码：1 / 34

页数：34

相关论文

共 98 条

[1] USE OF CATION-STABILIZED CONDITIONS TO IMPROVE COMPATIBILITY OF CDTE AND HGTE MOLECULAR-BEAM EPITAXY [J].

ARIAS, J ;

SINGH, J .

APPLIED PHYSICS LETTERS, 1989, 55 (15) :1561-1563

[2] THE 1ST OBSERVATION OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING THE GROWTH AND SUBLIMATION OF CDTE [J].

ARIAS, JM ;

SULLIVAN, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05) :3143-3146

[3] P-TYPE ARSENIC DOPING OF CDTE AND HGTE/CDTE SUPERLATTICES GROWN BY PHOTOASSISTED AND CONVENTIONAL MOLECULAR-BEAM EPITAXY [J].

ARIAS, JM ;

SHIN, SH ;

COOPER, DE ;

ZANDIAN, M ;

PASKO, JG ;

GERTNER, ER ;

DEWAMES, RE ;

SINGH, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02) :1025-1033

[4] SURFACE DYNAMICS DURING CDTE GROWTH BY MOLECULAR-BEAM EPITAXY [J].

ARNOULT, A ;

CIBERT, J .

APPLIED PHYSICS LETTERS, 1995, 66 (18) :2397-2399

[5] GROWTH-MODEL FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF CDTE USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATION MEASUREMENTS [J].

BEHR, T ;

LITZ, T ;

WAAG, A ;

LANDWEHR, G .

JOURNAL OF CRYSTAL GROWTH, 1995, 156 (03) :206-211

[6] NUCLEATION KINETICS OF MOLECULAR-BEAM EPITAXIALLY GROWN (001) ZNTE AND CDTE SURFACES [J].

BENSON, JD ;

SUMMERS, CJ .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (11) :5367-5372

[7] SURFACE STOICHIOMETRY AND REACTION-KINETICS OF MOLECULAR-BEAM EPITAXIALLY GROWN (001) CDTE SURFACES [J].

BENSON, JD ;

WAGNER, BK ;

TORABI, A ;

SUMMERS, CJ .

APPLIED PHYSICS LETTERS, 1986, 49 (16) :1034-1036

[8] CDTE AND HGTE SURFACE GROWTH-KINETICS FOR MOLECULAR AND METALORGANIC MOLECULAR-BEAM EPITAXY [J].

BENZ, RG ;

WAGNER, BK ;

CONTE, A ;

SUMMERS, CJ .

JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (08) :815-820

[9] SURFACE ENERGIES FOR MOLECULAR-BEAM EPITAXY GROWTH OF HGTE AND CDTE [J].

BERDING, MA ;

KRISHNAMURTHY, S ;

SHER, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03) :1858-1860

[10] THE ABSOLUTE DETERMINATION OF CDTE CRYSTAL POLARITY [J].

BROWN, PD ;

DUROSE, K ;

RUSSELL, GJ ;

WOODS, J .

JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) :211-215

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