GROWTH-MODEL FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF CDTE USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATION MEASUREMENTS

被引:15
作者
BEHR, T
LITZ, T
WAAG, A
LANDWEHR, G
机构
[1] Physikalisches Institut, Universität Würzburg
关键词
D O I
10.1016/0022-0248(95)00288-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We have investigated the molecular beam epitaxial growth of CdTe on (001)-oriented CdTe substrates. Reflection high energy electron diffraction (RHEED) oscillations were observed to measure the growth and desorption rate as a function of flux and temperature. Based on these results a model was developed which describes the decrease of growth rate with increasing substrate temperature taking into account the desorption from a physisorbed and a chemisorbed state. The desorption energy of the chemisorbed and also of the physisorbed state was calculated.
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收藏
页码:206 / 211
页数:6
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