MOLECULAR-BEAM EPITAXIAL-GROWTH MECHANISM OF ZNSE EPILAYERS ON (100) GAAS AS DETERMINED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, TRANSMISSION ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION

被引：16

作者：

RUPPERT, P ^{[1
]}

HOMMEL, D ^{[1
]}

BEHR, T ^{[1
]}

HEINKE, H ^{[1
]}

WAAG, A ^{[1
]}

LANDWEHR, G ^{[1
]}

机构：

[1] UNIV WURZBURG,INST PHYS,D-97074 WURZBURG,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90778-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The properties of molecular beam epitaxial growth of ZnSe epilayers deposited directly on a GaAs substrate are compared to those grown on a GaAs buffer layer. The superior quality of the latter is confirmed by RHEED, TEM and X-ray diffraction. Based on RHEED oscillation studies, a model explaining the dependence of the ZnSe growth rate on Zn and Se fluxes and the substrate temperature is developed taking into account physi- and chemisorbed states. For partially relaxed epilayers, the correlation between the relaxation state and the crystalline mosaicity, as found by high resolution X-ray diffraction, is discussed.

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页码：48 / 54

页数：7

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