STRUCTURAL DEFECTS IN BULK AND EPITAXIAL CDTE

被引：20

作者：

DUROSE, K

TURNBULL, A

BROWN, P

机构：

[1] University of Durham, Department of Physics, Durham, South Road

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 16卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(93)90022-F

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The advantages of growing bulk CdTe from the vapour are summarized and the structural defects present in material grown using three different vapour methods compared critically. Kawano's growth rate explanation of twin distribution is developed and the effect of growth conditions in anomalous cases is speculated upon. Experimentally observed tilts and rotations in CdTe/GaAs(001) are explained using a dislocation model which indicates a degree of cooperative alignment of certain interfacial dislocation components. The equilibrium distribution of threading dislocations and the prospects for filtering using soft, tensed layers, e.g. (HgMn)Te, are discussed.

引用

页码：96 / 102

页数：7

共 34 条

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ATKINS PW, 1978, PHYSICAL CHEM, P840

[2]

AYERS JE, 1991, MATER RES SOC SYMP P, V209, P661

[3] DEFECT STRUCTURE OF EPITAXIAL CDTE LAYERS GROWN ON (100) AND (111)B GAAS AND ON (111)B CDTE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].