Correlation between ambipolar transport and structural phase transition in diindenoperylene single crystals

被引：49

作者：

Tripathi, A. K. ^{[1
]}

Pflaum, J. ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Phys 3, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 08期

关键词：

D O I：

10.1063/1.2338587

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diindenoperylene (DIP) single crystals were grown by vapor phase sublimation growth technique, yielding crystals with preferential growth in the ab crystallographic plane. Time-of-flight (TOF) and x-ray measurements were performed over the temperature range between 300 and 405 K. By TOF the mobility for electrons is found to be higher by one order of magnitude than for holes over the studied temperature range. The temperature dependent mobility behavior indicates the effect of structural phase transition in accordance with temperature dependent x-ray measurements. Observation of electron and hole transport in DIP single crystals makes this compound interesting for ambipolar organic electronics.

引用

页数：3

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