High permittivity thin film nanolaminates

被引：80

作者：

Zhang, H

Solanki, R

Roberds, B

Bai, G

Banerjee, I

机构：

[1] Oregon Grad Inst, Dept Elect & Comp Engn, Beaverton, OR 97006 USA

[2] Intel Corp, Santa Clara, CA 95052 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 04期

关键词：

D O I：

10.1063/1.372113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin (similar to 10 nm) films comprising of Ta2O5-HfO2, Ta2O5-ZrO2, and ZrO2-HfO2 nanolaminates were deposited and characterized for possible gate dielectric applications. These films were deposited on silicon substrates using atomic layer deposition. The dielectric constants of these films were in 12-14 range and the leakage currents in 2.6 x 10(-8)-4.2 x 10(-7) A/cm(2) range at 1 MV/cm electric field. It was found that as these films were made thinner, the value of their dielectric constant dropped compared to their bulk values. The dominant leakage current mechanism at low electric fields was determined to be Schottky emission, whereas Poole-Frenkel emission dominated at higher fields. (C) 2000 American Institute of Physics. [S0021-8979(00)00404-7].

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页码：1921 / 1924

页数：4

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