Electrical characterisation of SiON/n-Si structures for MOS VLSI electronics

被引：84

作者：

Konofaos, N ^{[1
]}

机构：

[1] Univ Patras, Dept Comp Engn & Informat, GR-26500 Patras, Greece

来源：

MICROELECTRONICS JOURNAL | 2004年 / 35卷 / 05期

关键词：

silicon oxynitride; metal-oxide-semiconductor devices; bulk charges; interface traps; dielectric constant; thin film devices;

D O I：

10.1016/j.mejo.2004.01.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the present work, we examine the properties of SiON films grown on Si substrates by CVD in order to investigate their suitability as potential materials in replacing SiO2 in metal-oxide-semiconductor (MOS) devices. Suitable metallization created MOS devices and electrical characterisation took place in order to identify their electrical properties. Electrical measurements included current-voltage (l-V), capacitance-conductance-voltage (C-V) measurements and admittance spectroscopy (Y - omega) allowing determination of the bulk charges and the dielectric response of the films. The analysis of the data also took into account the presence of traps at the Si/SiON interface calculated by a fast conductance technique. The interface states density was of the order of 10(12) eV(-1) cm(-2). The dielectric constant was found to lie between 16 and 4.5 and the corresponding bulk trapped charges were found between 8 and 113 muCb cm(-2). Post deposition annealing altered these values showing an improvement of the device behaviour. A short explanation of the above is also provided. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：421 / 425

页数：5

共 19 条

[1]

BARBOTTIN G, 1999, INSTABILITIES SILICO, V2

[2] Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics:: Understanding the processing, structure, and physical and electrical limits [J].

Green, ML ;

Gusev, EP ;

Degraeve, R ;

Garfunkel, EL .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) :2057-2121

[3] A new low voltage fast SONOS memory with high-k dielectric [J].

Gritsenko, VA ;

Nasyrov, KA ;

Novikov, YN ;

Aseev, AL ;

Yoon, SY ;

Lee, JW ;

Lee, EH ;

Kim, CW .

SOLID-STATE ELECTRONICS, 2003, 47 (10) :1651-1656

[4] Short range order and the nature of defects and traps in amorphous silicon oxynitride governed by the Mott rule [J].

Gritsenko, VA ;

Xu, JB ;

Kwok, RWM ;

Ng, YH ;

Wilson, IH .

PHYSICAL REVIEW LETTERS, 1998, 81 (05) :1054-1057

[5] Structure of defects in silicon oxynitride films [J].

Hasegawa, S ;

Sakamori, S ;

Futatsudera, M ;

Inokuma, T ;

Kurata, Y .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (05) :2598-2605

[6] A SINGLE-FREQUENCY APPROXIMATION FOR INTERFACE-STATE DENSITY DETERMINATION [J].

HILL, WA ;

COLEMAN, CC .

SOLID-STATE ELECTRONICS, 1980, 23 (09) :987-993

[7] Effect of nitrogen plasma conditions on electrical properties of silicon oxynitrided thin films for flash memory applications [J].

Ikeda, A ;

Abd Elnaby, M ;

Hattori, R ;

Kuroki, Y .

THIN SOLID FILMS, 2001, 386 (01) :111-116

[8] Silicon integrated circuit technology from past to future [J].

Iwai, H ;

Ohmi, S .

MICROELECTRONICS RELIABILITY, 2002, 42 (4-5) :465-491

[9] DRAM technology perspective for gigabit era [J].

Kim, K ;

Hwang, CG ;

Lee, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (03) :598-608

[10] Alternative dielectrics to silicon dioxide for memory and logic devices [J].

Kingon, AI ;

Maria, JP ;

Streiffer, SK .

NATURE, 2000, 406 (6799) :1032-1038

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