DRAM technology perspective for gigabit era

被引:141
作者
Kim, K [1 ]
Hwang, CG [1 ]
Lee, JG [1 ]
机构
[1] Samsung Elect Co, Memory Device Business, Technol Dev, Kyungki Do, South Korea
关键词
D O I
10.1109/16.661221
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Many challenges emerge as the DRAM enters into a generation of the gigabit density era. Most of the challenges come from the shrink technology which scales down minimum feature size by a factor of 0.84 per year, The need for higher performance to narrow the bandwidth mismatch between fast processors and slower memories and lower power consumption drives the DRAM technology toward smaller cell size, faster memory cell operation, less power consumption, and longer data retention times, In addition, increasingly complicated wafer processing requires simple process, In this paper, the challenges brought from the extremely small minimum feature, high performance, and simple wafer processing will be discussed, The solutions to overcome the challenges will be described focusing on the memory cell scheme, lithography, device, memory cell capacitor, and metallization.
引用
收藏
页码:598 / 608
页数:11
相关论文
共 51 条
[1]  
Bohr MT, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P241, DOI 10.1109/IEDM.1995.499187
[2]  
BRONNER G, 1995, VLSI S P, P15
[3]   Optical Lithography - Thirty years and three orders of magnitude - The evolution of optical lithography tools [J].
Bruning, JH .
OPTICAL MICROLITHOGRAPHY X, 1997, 3051 :14-27
[4]  
BRYANT A, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P671, DOI 10.1109/IEDM.1994.383292
[5]   Patterning ULSI circuits [J].
Carruthers, JR .
ELECTRON-BEAM, X-RAY, EUV, AND ION-BEAM SUBMICROMETER LITHOGRAPHIES FOR MANUFACTURING VI, 1996, 2723 :2-14
[6]  
Chatterjee P. K., 1980, IEEE Electron Device Letters, VEDL-1, P220, DOI 10.1109/EDL.1980.25295
[7]  
Davarik B., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P61, DOI 10.1109/IEDM.1989.74228
[8]   DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].
DENNARD, RH ;
GAENSSLEN, FH ;
YU, HN ;
RIDEOUT, VL ;
BASSOUS, E ;
LEBLANC, AR .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268
[9]   Ion metal plasma (IMP) deposited titanium liners for 0.25/0.18 mu m multilevel interconnections [J].
Dixit, GA ;
Hsu, WY ;
Konecni, AJ ;
Krishnan, S ;
Luttmer, JD ;
Havemann, RH ;
Forster, J ;
Yao, GD ;
Narasimhan, M ;
Xu, Z ;
Ramaswami, S ;
Chen, FS ;
Nulman, J .
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :357-360
[10]   SUBMICROMETER PATTERNING BY PROJECTED EXCIMER-LASER-BEAM INDUCED CHEMISTRY [J].
EHRLICH, DJ ;
TSAO, JY ;
BOZLER, CO .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :1-8