Hall effect and magnetoresistance of carbon nanotube films

被引:88
作者
Baumgartner, G
Carrard, M
Zuppiroli, L
Bacsa, W
deHeer, WA
Forro, L
机构
[1] Physics Department, Ecole Polytechnique Fédérale de Lausanne
关键词
D O I
10.1103/PhysRevB.55.6704
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report Hall coefficient (R(H)) and magnetoresistance (Delta rho/rho) measurements on thin films of aligned carbon nanotubes. R(H) is positive in the whole temperature range (1.7-300 K) showing the predominance of hole transport in the electronic conduction. The upper limit of the carrier concentration is 1.6x10(19) cm(-3). The resistance of the thin-film samples is governed mainly by the loose tube-tube contacts and this shows up in the Delta rho/rho<0 at low fields, suggesting a noncoherent transport between the nanotubes.
引用
收藏
页码:6704 / 6707
页数:4
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