Properties of Ag doped ZnTe thin films by an ion exchange process

被引：16

作者：

Aqili, AKS ^{[1
]}

Maqsood, A ^{[1
]}

Ali, Z ^{[1
]}

机构：

[1] Quaid I Azam Univ, Dept Phys, Thermal Phys Lab, Islamabad 45320, Pakistan

来源：

APPLIED SURFACE SCIENCE | 2002年 / 191卷 / 1-4期

关键词：

ZnTe film; Ag doped; optical properties; electrical properties;

D O I：

10.1016/S0169-4332(02)00218-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 [物理化学]; 081704 [应用化学];

摘要：

ZnTe thin films prepared by two sourced thermal evaporation were immersed in A-NO solution for different time periods, then heated in vacuum. The resistivity of the doped film reduced to 0.01% of the resistivity of the undoped film. The effect of Ag doping on the structure of the films was studied by X-ray diffraction (XRD). while optical properties such as film thickness, refractive index, absorption coefficient and optical band gap of the films were calculated by fitting the transmittance in the range 400-2000 nm. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：280 / 285

页数：6

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