Density-of-states in microcrystalline silicon from thermally-stimulated conductivity

被引：2

作者：

Souffi, N. ^{[1
]}

Bauer, G. H. ^{[1
]}

Brueggemann, R. ^{[1
]}

机构：

[1] Carl Von Ossietzky Univ Oldenburg, Inst Phys, D-26111 Oldenburg, Germany

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 9-20期

关键词：

electrical and electronic properties; thermally-stimulated and depolarization current; defects;

D O I：

10.1016/j.jnoncrysol.2005.10.039

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The technique of thermally-stimulated currents has been applied to extract the density-of-states profile in microcrystalline silicon. Exploiting the experimental parameter space a consistent density-of-states profile emerges with an exponential conduction band tail and a broader deeper distribution. Calibrating the absolute density-of-states profile from other techniques like modulated photoconductivity, steady-state photocarrier grating technique and intensity-dependent photoconductivity allows a determination of the capture coefficient of the probed localized states. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1109 / 1112

页数：4

共 13 条

[1] Stability of microcrystalline silicon for thin film solar cell applications [J].

Finger, F ;

Carius, R ;

Dylla, T ;

Klein, S ;

Okur, S ;

Günes, M .

IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 2003, 150 (04) :300-308

[2] THERMOSTIMULATED CONDUCTIVITY IN AMORPHOUS-SEMICONDUCTORS [J].

FRITZSCHE, H ;

IBARAKI, N .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (03) :299-311

[3]

GU B, 1987, J NONCRYST SOLIDS, V97, P198

[4]

Kleider JP, 2004, PHYS STATUS SOLIDI C, V1, P1208, DOI 10.1002/pssc.200304322

[5]

Landweer G.E.N., 1989, ADV DISORDERED SEMIC, V1, P525

[6] THERMAL-ACTIVATION ENERGY OF STEADY-STATE PHOTOCONDUCTIVITY IN UNDOPED AMORPHOUS-SILICON AND SILICON-GERMANIUM ALLOYS [J].

LIU, JZ ;

WAGNER, S .

PHYSICAL REVIEW B, 1989, 39 (15) :11156-11159

[7] STUDY OF THE DISTRIBUTION OF LOCALIZED STATES IN A-SI-H USING THE THERMALLY-STIMULATED-CURRENTS TECHNIQUE [J].

MISRA, DS ;

KUMAR, A ;

AGARWAL, SC .

PHYSICAL REVIEW B, 1985, 31 (02) :1047-1054

[8] Analysis of the steady-state photocarrier grating method for the determination of the density of states in semiconductors [J].

Schmidt, JA ;

Longeaud, C .

PHYSICAL REVIEW B, 2005, 71 (12)

[9] Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors [J].

Schmidt, JA ;

Longeaud, C ;

Kleider, JP .

THIN SOLID FILMS, 2005, 493 (1-2) :319-324

[10] Determination of the density of defect states by thermally stimulated conductivity studied from numerical simulations [J].

Schmidt, JA ;

Koropecki, RR ;

Arce, R ;

Dussan, A ;

Buitrago, RH .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 :322-325

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