Long dephasing time in self-assembled InAs quantum dots at over 1.3 μm wavelength

Excitonic dephasing is investigated in InAs self-assembled quantum dots fabricated by the strain-compensation technique. The exciton ground-state emission is centered at the wavelength of 1420 nm at 5 K. Transient four-wave mixing measurements under resonant excitation clearly demonstrate a long dephasing time of 1.09 ns at 5 K, corresponding to the homogeneous broadening of 1.2 mu eV. The extrapolated zero-temperature homogeneous broadening is limited only by the population lifetime of the exciton ground state. At slightly increased temperatures, the acoustic-phonon broadening becomes dominant on dephasing.