Binary-solvent developer for cross-linked positive-tone resists

被引:4
作者
Yamaguchi, T [1 ]
Namatsu, H [1 ]
机构
[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 6B期
关键词
line-edge roughness; positive-tone resists; development; electron beam lithography; polymer aggregates;
D O I
10.1143/JJAP.41.4217
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new binary-solvent developer has been developed for a cross-linked positive-tone resist called suppressed aggregate extraction development (SAGEX) resist. It is composed of a good solvent and a poor solvent that does not produce swelling in the resist polymer. Hydrocarbon. such as n-hexane, was used as a poor solvent in this study because alcohol, which is conventionally used as a poor solvent, was not effective. A hydrocarbon, which causes little swelling of the base polymer, reduces the dissolution of lightly exposed SAGEX resist in a good solvent. As a result, with this developer, a high contrast can be obtained and resist residue can be eliminated at the same time. In addition, this developer has been shown to be effective in reducing resist roughness; that is, it helps reduce the line-edge roughness of resist patterns to 1 nm or less.
引用
收藏
页码:4217 / 4221
页数:5
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