Enhanced thermoelectric cooling at cold junction interfaces

被引：37

作者：

Ghoshal, U ^{[1
]}

Ghoshal, S

McDowell, C

Shi, L

Cordes, S

Farinelli, M

机构：

[1] IBM Corp, Res, Austin Res Lab, Austin, TX 78758 USA

[2] IBM Corp, Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 16期

关键词：

All Open Access; Bronze;

D O I：

10.1063/1.1473233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe a thermoelectric device structure that confines the thermal gradients and electric fields at the boundaries of the cold end, and exploits the reduction of thermal conductivity at the interfaces and the poor electron-phonon coupling at the junctions. The measured temperature-current and voltage-current characteristics of a prototype cold point-contact thermoelectric cooler based on a p-type Bi0.5Sb1.5Te3 and n-type Bi2Te2.9Se0.1 material system indicate an enhanced thermoelectric figure-of-merit ZT in the range of 1.4-1.7 at room temperature. (C) 2002 American Institute of Physics.

引用

页码：3006 / 3008

页数：3

共 7 条

[1]

Bartkowiak M, 1999, MATER RES SOC SYMP P, V545, P265

[2] Thermoelectric cooling and power generation [J].