Large area electrodeposition of Cu(In,Ga)Se2

被引：51

作者：

Kampmann, A ^{[1
]}

Sittinger, V ^{[1
]}

Rechid, J ^{[1
]}

Reineke-Koch, R ^{[1
]}

机构：

[1] Inst Solar Energieforsch GMBH, D-30165 Hannover, Germany

来源：

THIN SOLID FILMS | 2000年 / 361卷

关键词：

electrodeposition; In2Se3; CIGS; superstrate cell;

D O I：

10.1016/S0040-6090(99)00863-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The feasibility of large area electrodeposition of copper indium diselenide (CIS) for solar cell applications is investigated. CIS is deposited onto 80 cm(2) of ITO/In2Se3 and Mo substrates. The uniformity of the properties of the deposits is investigated by optical transmission and photocurrent spectra. Results for a cadmium free superstrate cell with a ITO/In2Se3/CIS/Au structure are presented, in which the buffer layer and the absorber layer were successively electrodeposited. The maximum selenisation temperature must be limited to 325 degrees C to avoid pn-junction destruction which is probably caused by interdiffusion processes. The best substrate cell with a Mo/CIS/CdS/ZnO structure yielded a preliminary efficiency of 4.8%. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：309 / 313

页数：5

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