Generating spin currents in semiconductors with the spin hall effect

被引：112

作者：

Sih, V. ^{[1
]}

Lau, W. H. ^{[1
]}

Myers, R. C. ^{[1
]}

Horowitz, V. R. ^{[1
]}

Gossard, A. C. ^{[1
]}

Awschalom, D. D. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Ctr Spintron & Quantum Computat, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 97卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.97.096605

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigate electrically induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the observed spin accumulation is due to a transverse bulk electron spin current, which can drive spin polarization nearly 40 microns into a region in which there is minimal electric field. Using a model that incorporates the effects of spin drift, we determine the transverse spin drift velocity from the magnetic field dependence of the spin polarization.

引用

页数：4

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