High-mobility amorphous In2O3-10 wt %ZnO thin film transistors

被引：207

作者：

Yaglioglu, B. ^{[1
]}

Yeom, H. Y. ^{[1
]}

Beresford, R. ^{[1
]}

Paine, D. C. ^{[1
]}

机构：

[1] Brown Univ, Div Engn, Providence, RI 02912 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2335372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on the fabrication and characterization of thin film transistors that use sputter deposited amorphous indium zinc oxide both for the channel and source-drain metallizations in a gate-down configuration. The channel and source-drain layers were deposited from a single In2O3-10 wt %ZnO ceramic target using dc magnetron sputtering onto an unheated substrate. The carrier densities in the channel (2.1x10(17)/cm(3)) and source/drain regions (3.3x10(20)/cm(3)) were adjusted by changing the reactive oxygen content in the sputter chamber during deposition. The resulting transistors operate as depletion mode n-channel field effect devices with saturation mobility of 20 cm(2)/V s and on/off current ratio of 10(8). (c) 2006 American Institute of Physics.

引用

页数：3

共 8 条

[1] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [J].