Electronic surface properties of rf-magnetron sputtered In2O3:Sn

被引：52

作者：

Gassenbauer, Y ^{[1
]}

Klein, A ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Inst Math Sci, D-64287 Darmstadt, Germany

来源：

SOLID STATE IONICS | 2004年 / 173卷 / 1-4期

关键词：

indium tin oxide; surface; photoemission; stoichiometry;

D O I：

10.1016/j.ssi.2004.07.065

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of tin doped indium oxide (In2O3:Sn or ITO) were deposited by rf-magnetron sputtering from ceramic In2O3/SnO2 targets. Surface electronic properties were investigated using in situ photoelectron spectroscopy (XPS, UPS). Bulk properties, were analysed using electrical and optical measurements. While for a range of deposition parameters the ITO films clearly show degenerate bulk doping, the surfaces exhibit a Fermi level position well below the conduction band minimum. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：141 / 145

页数：5

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