Reduction of photoconductive gain in quantum well infrared photodetectors

被引:22
作者
Choi, KK
机构
[1] U. S. Army Research Laboratory, Fort Monmouth
关键词
D O I
10.1063/1.362868
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this work, we show that there is a reduction of photoconductive gain g in quantum well infrared photodetectors from its classical value. The reduction is caused by the quantum nature of electron transport in these structures. On the other hand, the generation-recombination noise is unaffected by the transport model, and remains to be the same as a classical photoconductor. The reduction of g leads to an apparent noise increase in these structures, i.e., the noise gain deduced from the noise measurement is larger than g deduced from the photoconductivity measurements. We compared the present theory with existing experimental data, and found reasonable agreement. (C) 1996 American Institute of Physics.
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页码:1257 / 1259
页数:3
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