Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

被引:61
作者
Tsukimoto, S [1 ]
Nitta, K [1 ]
Sakai, T [1 ]
Moriyama, M [1 ]
Murakami, M [1 ]
机构
[1] Kyoto Univ, Dept Mat Sci & Engn, Kyoto 6068501, Japan
关键词
TiAl-based; p-type; 4H-SiC; ohmic contact; microstructure; Ti3SiC2;
D O I
10.1007/s11664-004-0203-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In order to understand a mechanism of TiAl-based ohmic contact formation for p-type 4H-SiC, the electrical properties and microstructures of Ti/Al and Ni/Ti/Al contacts, which provided the specific contact resistances of approximately 2 X 10(-5) Omega-cm(2) and 7 X 10(-5) Omegacm(2) after annealing at 1000degreesC and 800degreesC, respectively, were investigated using x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Ternary Ti3SiC2 carbide layers were observed to grow on the SiC surfaces in both the Ti/Al and the Ni/Ti/Al contacts when the contacts yielded low resistance. The Ti3SiC2 carbide layers with hexagonal structures had an epitaxial orientation relationship with the 4H-SiC substrates. The (0001)-oriented terraces were observed periodically at the interfaces between the carbide layers and the SiC, and the terraces were atomically flat. We believed the Ti3SiC2 carbide layers primarily reduced the high Schottky barrier height at the contact metal/p-SiC interface down to about 0.3 eV, and, thus, low contact resistances were obtained for p-type TiAl-based ohmic contacts.
引用
收藏
页码:460 / 466
页数:7
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