Single-electron transistors based on Al/AlOx/Al and Nb/AlOx/Nb tunnel junctions

被引：9

作者：

Bluthner, K ^{[1
]}

Gotz, M ^{[1
]}

Hadicke, A ^{[1
]}

Krech, W ^{[1
]}

Wagner, T ^{[1
]}

Muhlig, H ^{[1
]}

Fuchs, HJ ^{[1
]}

Hubner, U ^{[1
]}

Schelle, D ^{[1
]}

Kley, EB ^{[1
]}

Fritzsch, L ^{[1
]}

机构：

[1] INST PHYS HOCHTECHNOL EV,D-07743 JENA,GERMANY

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1997年 / 7卷 / 02期

关键词：

D O I：

10.1109/77.621988

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As an alternative to the shadow evaporation method for the preparation of ultrasmall tunnel junctions we have established the so-called self-aligned in-line technique. It was applied to the fabrication of common Al/AlOx/Al-type and, for the first time, Nb/AlOx/Nb-based single-electron transistors. The characterization of the samples at temperatures in the range of a few hundred millikelvins reveals charging effects (Coulomb blockade and gate modulation) of the quasiparticle current.

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收藏

页码：3099 / 3102

页数：4

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