Strain, size, and composition of InAs quantum sticks embedded in InP determined via grazing incidence x-ray anomalous diffraction -: art. no. 186101

被引:45
作者
Létoublon, A
Favre-Nicolin, V
Renevier, H
Proietti, MG
Monat, C
Gendry, M
Marty, O
Priester, C
机构
[1] CEA, Dept Rech Fondamentale Mat Condensee, SP2M NRS, F-38054 Grenoble 9, France
[2] Univ Grenoble 1, F-38041 Grenoble 9, France
[3] Univ Zaragoza, CSIC, Inst Ciencia Mat Aragon, Dept Fis Mat Condensada, E-50009 Zaragoza, Spain
[4] Ecole Cent Lyon, CNRS, UMR 5512, LEOM, F-69134 Ecully, France
[5] Univ Lyon 1, LENAC, F-69621 Villeurbanne, France
[6] Dept ISEN, Inst Electron Microelectron & Nanotechnol, F-59652 Villeneuve Dascq, France
关键词
D O I
10.1103/PhysRevLett.92.186101
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have used x-ray anomalous diffraction to recover the model-independent Fourier transform (x-ray structure factor) of InAs quantum sticklike islands embedded in InP. The average height of the quantum sticks, as deduced from the width of the structure factor profile, is 2.54 nm. The InAs out-of-plane deformation, relative to InP, is 6.1%. Diffraction anomalous fine structure provides evidence of pure InAs quantum sticks. Finite difference method calculations reproduce well the diffraction data, and give the strain along the growth direction. The chemical mixing at interfaces is also analyzed.
引用
收藏
页码:186101 / 1
页数:4
相关论文
共 12 条
[1]  
Bimberg D., 1999, QUANTUM DOT HETEROST
[2]  
DOSCH H, 1992, CRITICAL PHENOMENA S
[3]   From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001) [J].
Gendry, M ;
Monat, C ;
Brault, J ;
Regreny, P ;
Hollinger, G ;
Salem, B ;
Guillot, G ;
Benyattou, T ;
Bru-chevallier, C ;
Bremond, G ;
Marty, O .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (09) :4761-4766
[4]   Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures [J].
González, L ;
García, JM ;
García, R ;
Briones, F ;
Martínez-Pastor, J ;
Ballesteros, C .
APPLIED PHYSICS LETTERS, 2000, 76 (09) :1104-1106
[5]   Grazing-incidence diffraction anomalous fine structure of InAs/InP(001) self-assembled quantum wires [J].
Grenier, S ;
Proietti, MG ;
Renevier, H ;
González, L ;
García, JM ;
García, J .
EUROPHYSICS LETTERS, 2002, 57 (04) :499-505
[6]  
KEGEL I, 1908, PHYS REV B, V63
[7]   Direct evaluation of composition profile, strain relaxation, and elastic energy of Ge:Si(001) self-assembled islands by anomalous x-ray scattering -: art. no. 245312 [J].
Magalhaes-Paniago, R ;
Medeiros-Ribeiro, G ;
Malachias, A ;
Kycia, S ;
Kamins, TI ;
Williams, RS .
PHYSICAL REVIEW B, 2002, 66 (24) :1-6
[8]  
MONAT C, 2002, P 14 IND PHOSPH REL, P565
[9]   Inhomogeneous strain relaxation in etched quantum dots and wires: From strain distributions to piezoelectric fields and band-edge profiles [J].
Niquet, YM ;
Priester, C ;
Gourgon, C ;
Mariette, H .
PHYSICAL REVIEW B, 1998, 57 (23) :14850-14859
[10]   Diffraction-anomalous-fine-structure spectroscopy applied to the study of III-V strained semiconductors [J].
Proietti, MG ;
Renevier, H ;
Hodeau, JL ;
García, J ;
Bérar, JF ;
Wolfers, P .
PHYSICAL REVIEW B, 1999, 59 (08) :5479-5492