In situ pre-growth calibration using reflectance as a control strategy for MOCVD fabrication of device structures

被引:18
作者
Breiland, WG
Hou, HQ
Chui, HC
Hammons, BE
机构
[1] Department 1126, MS 0601, Sandia National Laboratories, Albuquerque
[2] Hewlett Packard Co., San Jose, CA 95131
关键词
MOCVD; reflectance; in situ; virtual interface; VCSEL;
D O I
10.1016/S0022-0248(97)00020-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In situ normal incidence reflectance, combined with a virtual interface model, is being used routinely on a commercial metal organic chemical vapor deposition reactor to measure growth rates of compound semiconductor films. The technique serves as a pre-growth calibration tool analogous to the use of reflection high-energy electron diffraction in molecular beam epitaxy as well as a real-time monitor throughout the run. An application of the method to the growth of a vertical cavity surface emitting laser (VCSEL) device structure is presented. All necessary calibration information can be obtained using a single run lasting less than 1 h. Working VCSEL devices are obtained on the first try after calibration. Repeated runs have yielded +/-0.3% reproducibility of the Fabry-Perot cavity wavelength over the course of more than 100 runs.
引用
收藏
页码:564 / 571
页数:8
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