IN-SITU SPECTRAL REFLECTANCE MONITORING OF III-V EPITAXY

被引：44

作者：

KILLEEN, KP

BREILAND, WG

机构：

[1] Sandia National Laboratories, Albuquerque, 87185, NM

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 02期

关键词：

ALAS/ALGAAS IN-SITU REFLECTANCE MONITORING; METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD);

D O I：

10.1007/BF02655266

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Near normal incidence spectral reflectance was used to monitor the growth of AlAs, GaAs, and AlGaAs films by metalorganic chemical vapor deposition in real time. The simultaneous acquisition of reflectance data over a wide spectral bandwidth allows compositional discrimination between layers and greater thickness sensitivity than single wavelength measurements. The potential of this technique for application to device structures was demonstrated by monitoring the fabrication of AlAs/AlGaAs visible distributed Bragg reflectors.

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收藏

页码：179 / 183

页数：5

相关论文

共 21 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[2] APPLICATION OF ELLIPSOMETRY TO CRYSTAL-GROWTH BY ORGANOMETALLIC MOLECULAR-BEAM EPITAXY [J].

ASPNES, DE ;

QUINN, WE ;

GREGORY, S .

APPLIED PHYSICS LETTERS, 1990, 56 (25) :2569-2571

[3] OPTICAL-PROPERTIES OF ALXGA1-XAS [J].

ASPNES, DE ;

KELSO, SM ;

LOGAN, RA ;

BHAT, R .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :754-767

[4] OPTICALLY MONITORING AND CONTROLLING EPITAXIAL-GROWTH [J].

ASPNES, DE ;

BHAT, R ;

CANEAU, C ;

COLAS, E ;

FLOREZ, LT ;

GREGORY, S ;

HARBISON, JP ;

KAMIYA, I ;

KERAMIDAS, VG ;

KOZA, MA ;

PUDENZI, MAA ;

QUINN, WE ;

SCHWARZ, SA ;

TAMARGO, MC ;

TANAKA, H .

JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) :71-77

[5] TIME-RESOLVED OPTICAL REFLECTIVITY AND EMISSIVITY DURING AND AFTER CHEMICAL VAPOR-DEPOSITION OF AMORPHOUS AND CRYSTALLINE SILICON [J].

BEERS, AM ;

HINTZEN, HTJM ;

BLOEM, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) :1426-1433

[6] THERMAL EXPANSION OF ALAS [J].

ETTENBERG, M ;

PAFF, RJ .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :3926-+

[7] DYNAMIC OPTICAL REFLECTIVITY TO MONITOR THE REAL-TIME METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF ALGAAS LAYERS [J].

FARRELL, T ;

ARMSTRONG, JV ;

KIGHTLEY, P .

APPLIED PHYSICS LETTERS, 1991, 59 (10) :1203-1205

[8] REFRACTIVE INDEX OF ALAS [J].

FERN, RE ;

ONTON, A .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3499-&

[9] INSITU LASER REFLECTOMETRY APPLIED TO THE GROWTH OF ALXGA1-XAS BRAGG REFLECTORS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

FRATESCHI, NC ;

HUMMEL, SG ;

DAPKUS, PD .

ELECTRONICS LETTERS, 1991, 27 (02) :155-157

[10] SURFACE-ANALYSIS DURING VAPOR-PHASE GROWTH [J].

HOTTIER, F ;

THEETEN, JB .

JOURNAL OF CRYSTAL GROWTH, 1980, 48 (04) :644-654