Determination of the band gap depth profile of the penternary Cu(In(1-X)GaX)(SYSe(1-Y))2 chalcopyrite from its composition gradient

被引：146

作者：

Bär, M

Bohne, W

Röhrich, J

Strub, E

Lindner, S

Lux-Steiner, MC

Fischer, CH

Niesen, TP

Karg, F

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

[2] Shell Solar GmbH, D-81739 Munich, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 07期

关键词：

D O I：

10.1063/1.1786340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple model is introduced which determines the optical band-gap energy E-g for penternary Cu(In(1-X)GaX)(SYSe(1-Y))(2) (CIGSSe) alloys from its Ga/(Ga+In) ratio as well as from its S/(S+Se) ratio. In order to verify the model the depth dependent composition of a CIGSSe sample was revealed by elastic recoil detection analysis. Applying the model, the concentration profiles were transferred in an E-g profile. Finally, these values were compared with optical band-gap energies, which were obtained directly by independent characterization methods. (C) 2004 American of Physics.

引用

页码：3857 / 3860

页数：4

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