High-performance polycrystalline silicon thin film transistors on non-alkali glass produced using continuous wave laser lateral crystallization

被引：128

作者：

Hara, A ^{[1
]}

Takeuchi, F ^{[1
]}

Takei, M ^{[1
]}

Suga, K ^{[1
]}

Yoshino, K ^{[1
]}

Chida, M ^{[1
]}

Sano, Y ^{[1
]}

Sasaki, N ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 3B期

关键词：

poly-Si; thin film transistor; TFT; CW laser; crystal growth;

D O I：

10.1143/JJAP.41.L311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed high-performance polycrystalline silicon (poly-Si) thin film transistors (TFTs) with a field-effect mobility of 566 cm(2)/V.s for n-channel TFT and 200 cm(2)/V.s for p-channel TFT on 300 mm x 300 mm non-alkali glass substrate. The TFTs were developed using a stable diode pumped solid state (DPSS) continuous-wave laser lateral crystallization (CLC) method at a temperature below 450 degreesC. The high performance of the TFTs was attributed to the very large predominantly (100)-oriented grain. This crystallization method will enable high-performance Si-LSI circuits to be fabricated on large non-alkali class substrates.

引用

页码：L311 / L313

页数：3

共 22 条

[1] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].