Microstructure and electromigration in copper damascene lines

被引：55

作者：

Arnaud, L

Tartavel, G

Berger, T

Mariolle, D

Gobil, Y

Touet, I

机构：

[1] CEA G, LETI, F-38054 Grenoble, France

[2] ST Microelect, F-38926 Crolles, France

来源：

MICROELECTRONICS RELIABILITY | 2000年 / 40卷 / 01期

关键词：

D O I：

10.1016/S0026-2714(99)00209-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Grain sizes and crystallographic orientations of Cu were analyzed versus linewidth in damascene Cu interconnects. Pure bamboo lines were not obtained because grain size decreased as linewidth was reduced. Comparison of electromigration results, for wide line Chemical vapor deposition-Cu (3 mu m) polycrystalline structure, and narrow lines (0.5 mu m) quasi-bamboo structure, provided almost the same activation energy E(a)similar to 0.65 eV. even though the poor (2 0 0) texture has rotated in the film plane for the narrow damascene lines. These results are in agreement with copper diffusion involving surface diffusion. Besides. even with a polycrystalline crystallographic orientation, PVD-Cu samples showed a better activation energy value E-a=1.02 eV. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：77 / 86

页数：10

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