Controlled growth of long GaN nanowires from catalyst patterns fabricated by "Dip-Pen" nanolithographic techniques

Long gallium nitride (GaN) nanowires Were directly grown on SiO2 substrates from spatially defined locations using a chemical vapor deposition method. Locations of the GaN nanowires were well-controlled by using atomic force microscope (AFM)-based "dip-pen" nanolithography (DPN) and other patterning methods to precisely pattern catalyst islands on the substrate. Devices made of single GaN nanowires were fabricated and characterized. The convenient use of patterning techniques, especially the DPN technique, demonstrates a practical route to control the location of nanowires and for in situ fabrication of nanowire devices.