Spin-dependent transport phenomena in a HEMT

被引：8

作者：

Bournel, A

Dollfus, P

Bruno, P

Hesto, P

机构：

[1] Univ Paris Sud, CNRS UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France

[2] Max Planck Inst MVikrostrukturphys, D-06120 Halle, Germany

来源：

PHYSICA B | 1999年 / 272卷 / 1-4期

关键词：

HEMT; spin-orbit coupling; spin precession;

D O I：

10.1016/S0921-4526(99)00298-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

After reviewing the spin-dephasing mechanisms appearing in III-V heterostructures, we study theoretically spin-dependent transport in the channel of a original architecture of high electron mobility transistor, the spin-FET. We investigate particularly the spin relaxation associated to Rashba spin precession. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：331 / 334

页数：4

共 7 条

[1] Gate-induced spin precession in an In0.53Ga0.47As two dimensional electron gas [J].