Cluster formation during annealing of ultra-low-energy boron-implanted silicon

被引：11

作者：

Collart, EJH ^{[1
]}

Murrell, AJ

Foad, MA

van den Berg, JA

Zhang, S

Armour, D

Goldberg, RD

Wang, TS

Cullis, AG

机构：

[1] Appl Implant Div, Horsham RH13 5PY, W Sussex, England

[2] Univ Salford, Dept Phys, Joule Lab, Salford M5 4WT, Lancs, England

[3] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[4] IMEC VZW, Interuniv Microelect Ctr, B-3001 Louvain, Belgium

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 01期

关键词：

D O I：

10.1116/1.591207

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The clustering of low-energy ion-implanted boron has been investigated. Two 1 keV boron implantations at doses of 1 x 10(15) and 5 x 10(15) cm(-2) were annealed for 10 s between 700 and 1100 degrees C. The evolution of the boron concentration profiles was monitored using secondary ion mass spectrometry. Electrical activation was measured with four-point-probe measurements and spreading resistance profiling. The displaced Si concentration profiles were determined from medium-energy ion-scattering measurements. (C) 2000 American Vacuum Society. [S0734-211X(00)01301-9].

引用

页码：435 / 439

页数：5

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