Determination of the barrier-height fluctuations based on the parallel-noninteracting diode model

被引：3

作者：

Alonso, CF

Hernández, MP

Casielles, E

Peña, JL

机构：

[1] Univ La Habana, Fac Fis, Havana 10400, Cuba

[2] IPN, CICATA Altamira, Puerto Ind Altamira, Tamps 89600, Mexico

[3] Univ La Habana, Inst Mat & React, Havana 10400, Cuba

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 20期

关键词：

D O I：

10.1063/1.1480882

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A model is proposed to determine the barrier height fluctuations of the inhomogeneous Schottky junction from the experimental current-voltage (I-V) characteristics. This model is based on noninteracting parallel diodes. In it, the current of each diode responds to a general expression of the thermionic theory where the Schottky effect and the series resistance are enclosed. The barrier height fluctuations are an effective-area barrier-height distribution which is defined as the probability of occurrence of the barrier height for each diode. The model is applied to the experimental I-V curves reported by I. M. Dharmadasa , Solid-State Electronics 42, 595 (1998). (C) 2002 American Institute of Physics.

引用

页码：3751 / 3753

页数：3

共 16 条

[1]

Bell LD, 1996, ANNU REV MATER SCI, V26, P189

[2] OBSERVATION OF INTERFACE BAND-STRUCTURE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY [J].