Electrical and physical properties of HfO2 deposited via ALD using Hf(OtBu)4 and ozone atop Al2O3

被引：18

作者：

Chang, HS ^{[1
]}

Baek, SK

Park, H

Hwang, H

Oh, JH

Shin, WS

Yeo, JH

Hwang, KH

Nam, SW

Lee, HD

Song, CL

Moon, DW

Cho, MH

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Samsung Elect Corp, Fab Proc Technol Dev Team, Yongin 449711, Gyeonggi Do, South Korea

[3] Korea Res Inst Stand & Sci, Nano Surface Grp, Taejon 305600, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2004年 / 7卷 / 06期

关键词：

D O I：

10.1149/1.1707031

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

HfO2 films were deposited via Hf(OtBu)(4) precursor and ozone oxidant using atomic layer deposition (ALD) atop Al2O3. We report the impact of annealing conditions on the physical and electrical properties of a HfO2 on Al2O3/SiN/Si substrate using medium-energy ion scattering spectroscopy, high-resolution transmission electron microscopy, thermal desorption spectra, and electrical measurements. Annealing temperatures influence the microstructure and impurity levels of Hf(OtBu) 4HfO2/Al2O3/SiN films. The leakage currents of Al2O3-HfO2 bilayer were decreased with the increase of annealing temperature and the structures of the bilayer did not break until 850degreesC. This change was closely related to the reduction of carbon and organic contamination during annealing. However, annealing at 950degreesC drastically degraded electrical properties due to the intermixing of the HfO2-Al2O3 bilayer structure. (C) 2004 The Electrochemical Society.

引用

页码：F42 / F44

页数：3

共 10 条

[1] Dielectric characteristics of Al2O3-HfO2 nanolaminates on Si(100) [J].

Cho, MH ;

Roh, YS ;

Whang, CN ;

Jeong, K ;

Choi, HJ ;

Nam, SW ;

Ko, DH ;

Lee, JH ;

Lee, NI ;

Fujihara, K .

APPLIED PHYSICS LETTERS, 2002, 81 (06) :1071-1073

[2] Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition [J].

Cho, MH ;

Roh, YS ;

Whang, CN ;

Jeong, K ;

Nahm, SW ;

Ko, DH ;

Lee, JH ;

Lee, NI ;

Fujihara, K .

APPLIED PHYSICS LETTERS, 2002, 81 (03) :472-474

[3] Robustness of ultrathin aluminum oxide dielectrics on Si(001) [J].

Copel, M ;

Cartier, E ;

Gusev, EP ;

Guha, S ;

Bojarczuk, N ;

Poppeller, M .

APPLIED PHYSICS LETTERS, 2001, 78 (18) :2670-2672

[4] Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition [J].

Ho, MY ;

Gong, H ;

Wilk, GD ;

Busch, BW ;

Green, ML ;

Lin, WH ;

See, A ;

Lahiri, SK ;

Loomans, ME ;

Räisänen, PI ;

Gustafsson, T .

APPLIED PHYSICS LETTERS, 2002, 81 (22) :4218-4220

[5]

Jung HS, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P853, DOI 10.1109/IEDM.2002.1175971

[6] Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition [J].

Kim, H ;

McIntyre, PC ;

Saraswat, KC .

APPLIED PHYSICS LETTERS, 2003, 82 (01) :106-108

[7] Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing [J].

Lee, BH ;

Kang, LG ;

Nieh, R ;

Qi, WJ ;

Lee, JC .

APPLIED PHYSICS LETTERS, 2000, 76 (14) :1926-1928

[8] ION BEAM CRYSTALLOGRAPHY OF SURFACES AND INTERFACES [J].

Van der Veen, J. F. .

SURFACE SCIENCE REPORTS, 1985, 5 (5-6) :199-287

[9] High permittivity thin film nanolaminates [J].

Zhang, H ;

Solanki, R ;

Roberds, B ;

Bai, G ;

Banerjee, I .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (04) :1921-1924

[10]

Zhu W., 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), p20.4.1, DOI 10.1109/IEDM.2001.979541

← 1 →