Atmospheric pressure vapor-phase growth of ZnO using a chloride source

被引：32

作者：

Takahashi, N

Kaiya, K

Omichi, K

Nakamura, T

Okamoto, S

Yamamoto, H

机构：

[1] Shizuoka Univ, Fac Engn, Dept Mat Sci & Technol, Hamamatsu, Shizuoka 4328561, Japan

[2] Tottori Univ, Dept Elect & Elect Engn, Fac Engn, Tottori 6808552, Japan

[3] Tokyo Univ Technol, Dept Engn, Hachioji, Tokyo 1928580, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 04期

关键词：

ZnO; atmospheric pressure vapor-phase growth; ZnCl2; O-2; high growth rate; band edge emission;

D O I：

10.1016/S0022-0248(99)00611-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Atmospheric pressure vapor-phase growth was demonstrated for the growth of zinc oxide (ZnO) films on sapphire (0 0 0 1) substrates. The X-ray diffractogram showed a typical pattern of ZnO having a hexagonal structure, and a full-width at half-maximum (FWHM) of 23.3 min was obtained in the X-ray diffraction profile. The growth rate of the ZnO film increased from 0.1 to 8.0 mu m/h with increasing growth temperature and input partial pressures of ZnCl2 and O-2, respectively. A strong band edge emission at 370.0 nm was observed in the photoluminescence spectra at 20 K. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：822 / 827

页数：6

共 8 条

[1] Optically pumped lasing of ZnO at room temperature [J].