Orientation-dependent potential barriers in case of epitaxial Pt-BiFeO3-SrRuO3 capacitors

被引：64

作者：

Pintilie, L. ^{[1
]}

Dragoi, C. ^{[1
,2
]}

Chu, Y. H. ^{[3
]}

Martin, L. W. ^{[4
]}

Ramesh, R. ^{[4
]}

Alexe, M. ^{[5
]}

机构：

[1] Natl Inst Mat Phys, Magurele 077125, Romania

[2] Univ Bucharest, Fac Phys, Magurele 077125, Romania

[3] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[4] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[5] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 23期

关键词：

bismuth compounds; electrodes; ferroelectric capacitors; ferroelectric thin films; leakage currents; permittivity; platinum; pulsed laser deposition; strontium compounds; BIFEO3; THIN-FILMS;

D O I：

10.1063/1.3152784

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The leakage current in epitaxial BiFeO3 capacitors with bottom SrRuO3 and top Pt electrodes, grown by pulsed laser deposition on SrTiO3 (100), SrTiO3 (110), and SrTiO3 (111) substrates, is investigated by current-voltage (I-V) measurements in the 100-300 K temperature range. It is found that the leakage current is interface-limited and strongly dependent on the orientation of the substrate. The potential barriers at the electrode interfaces are estimated to about 0.6, 0.77, and 0.93 eV for the (100), (110), and (111) orientations, respectively.

引用

页数：3