Self-organized InGaAs quantum dots grown by molecular beam epitaxy on (100), (711)A/B, (511)A/B, (311)A/B, (211)A/B, and (111)A/B oriented GaAs

In this paper, we report optical properties of InGaAs quantum dots grown by molecular beam epitaxy on GaAs (n11)A/B, where n is 1, 2, 3, 5 and 7, and reference (100) substrates. A higher crystal quality of quantum dots has been detected on (n11)B surfaces due to the strong integrated photoluminescence (PL) intensity, its value on (711)B orientation being LO times larger than the QW one. Quantum dots grown on a (311)B surface showed a higher homogeneity in size. The quantum well PL peak position reveals a non-monotonical red-shift when the surface direction changes from (100) to (111).