Synthesis of ultrathin carbon films by direct current filtered cathodic vacuum arc

被引：71

作者：

Zhang, H. -S. ^{[1
]}

Komvopoulos, K. ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 08期

关键词：

adsorption; atomic force microscopy; carbon; hardness; Monte Carlo methods; surface diffusion; surface roughness; vacuum deposited coatings; vacuum deposition; X-ray photoelectron spectra; X-ray reflection; TETRAHEDRAL AMORPHOUS-CARBON; ION-BEAM DEPOSITION; CROSS-SECTIONAL STRUCTURE; ENERGY-LOSS SPECTROSCOPY; STRESS-INDUCED FORMATION; X-RAY REFLECTIVITY; THIN-FILMS; SUBPLANTATION MODEL; DIAMOND; DENSITY;

D O I：

10.1063/1.3098254

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Filtered cathodic vacuum arc was used to synthesize ultrathin carbon films on silicon substrates. The depth profiles, near-surface chemical composition, fractions of tetrahedral (sp(3)) and trigonal (sp(2)) carbon atom hybridizations, roughness, and hardness of the carbon films were determined from Monte Carlo (T-DYN) simulations and x-ray reflectivity (XRR), x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and surface force microscopy (SFM) measurements, respectively. Films of thickness of only a few nanometers possessed smaller sp(3) fractions than much thicker films. The effective hardness was found to depend on the sp(3) fraction and silicon-carbon composition profile. The formation of different carbon atom bonds, film growth mechanisms, and optimum process conditions for synthesizing ultrathin carbon films are interpreted in the context of T-DYN, XRR, XPS, AFM, and SFM results and surface bombardment, adsorption, and diffusion mechanisms.

引用

页数：7

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