Carbon nanotube linear bearing nanoswitches

被引:128
作者
Deshpande, V. V.
Chiu, H. -Y.
Postma, H. W. Ch.
Miko, C.
Forro, L.
Bockrath, M. [1 ]
机构
[1] CALTECH, Dept Appl Phys, Pasadena, CA 91125 USA
[2] Ecole Polytech Fed Lausanne, IPMC, SB, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1021/nl052513f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We exploit the remarkable low-friction bearing capabilities of multiwalled carbon nanotubes (MWNTs) to realize nanoelectromechanical switches. Our switches consist of two open-ended MWNT segments separated by a nanometer-scale gap. Switching occurs through electrostatically actuated sliding of the inner nanotube shells to close the gap, producing a conducting ON state. For double-walled nanotubes in particular, a gate voltage can restore the insulating OFF state. Acting as a nonvolatile memory element capable of several switching cycles, our devices are straightforward to implement, self-aligned, and do not require complex fabrication or geometries, allowing for convenient scalability.
引用
收藏
页码:1092 / 1095
页数:4
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