Analysis of phase-transformation dynamics and estimation of amorphous-chalcogenide fraction in phase-change memories

被引：20

作者：

Itri, A ^{[1
]}

Ielmini, D ^{[1
]}

Lacaita, AL ^{[1
]}

Pirovano, A ^{[1
]}

Pellizzer, F ^{[1
]}

Bez, R ^{[1
]}

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

来源：

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/RELPHY.2004.1315325

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the current-induced phase transformations in chalcogenide-based memories. By electrical characterization and compact simulation of the memory I - V, we point out the evidence for a stacked distribution of phases as a result of the applied programming pulses. An anomalous cell behavior is also shown, which we explain in terms of parallel phase transition in the cell. A new technique for estimating the amorphous fraction is proposed, requiring only a simple manipulation of I - V characteristics of the memory.

引用

页码：209 / 215

页数：7

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