Thermoelectric properties of doped (ZnO)mIn2O3

被引:28
作者
Kaga, H [1 ]
Asahi, R [1 ]
Tani, T [1 ]
机构
[1] Toyota Cent Res & Dev Labs Inc, Aichi 4801192, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 6A期
关键词
thermoelectric; layer-structured; zinc indium oxide; Ca doping; thermal conductivity;
D O I
10.1143/JJAP.43.3540
中图分类号
O59 [应用物理学];
学科分类号
摘要
The thermoelectric properties of layer-structured homologous compounds of (ZnO)(m)In2O3 (in is an integer) were investigated in terms of the detailed dependence of the molar ratio of ZnO to In2O3, n (=ZnO/In2O3), and of doping, such as with Ba2+, Ca2+, Sr2+, and Sn4+, for an In site. Except for the Ba and Sr dopings, all sintered specimens with n greater than or equal to 3 were found to be in the phases of (ZnO) In2O3. The highest power factor apparently existed around n = 3 while the thermal conductivity was minimum at the range from n = 3.5 to 5. The Ca doping effectively reduced the thermal conductivity, resulting in a dimensionless figure of merit of 0.23 (at 1053 K) for n = 3.5, which was relatively high among n-type oxides.
引用
收藏
页码:3540 / 3543
页数:4
相关论文
共 10 条
[1]   Electrical and thermal transport properties in layer-structured (ZnO)mIn2O3 (m=5 and 9) ceramics [J].
Hirano, S ;
Isobe, S ;
Tani, T ;
Kitamura, N ;
Matsubara, C ;
Koumoto, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (11A) :6430-6435
[2]   Thermoelectric performance of yttrium-substituted (ZnO)5In2O3 improved through ceramic texturing [J].
Isobe, S ;
Tani, T ;
Masuda, Y ;
Seo, WS ;
Koumoto, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (2A) :731-732
[3]   Improvement in thermoelectric properties of (ZnO)5In2O3 through partial substitution of yttrium for indium [J].
Kazeoka, M ;
Hiramatsu, H ;
Seo, WS ;
Koumoto, K .
JOURNAL OF MATERIALS RESEARCH, 1998, 13 (03) :523-526
[4]   SYNTHESES AND SINGLE-CRYSTAL DATA OF HOMOLOGOUS COMPOUNDS, IN2O3(ZNO)(M) (M=3, 4, AND 5), INGAO3(ZNO)(3), AND GA2O3(ZNO)(M) (M=7, 8, 9, AND 16) IN THE IN2O3-ZNGA2O4-ZNO SYSTEM [J].
KIMIZUKA, N ;
ISOBE, M ;
NAKAMURA, M .
JOURNAL OF SOLID STATE CHEMISTRY, 1995, 116 (01) :170-178
[5]   Structure and thermoelectric transport properties of isoelectronically substituted (ZnO)5In2O3 [J].
Masuda, Y ;
Ohta, M ;
Seo, WS ;
Pitschke, W ;
Koumoto, K .
JOURNAL OF SOLID STATE CHEMISTRY, 2000, 150 (01) :221-227
[6]  
Moriga T, 1998, J AM CERAM SOC, V81, P1310, DOI 10.1111/j.1151-2916.1998.tb02483.x
[7]   Systematic study and performance optimization of transparent conducting indium-zinc oxides thin films [J].
Naghavi, N ;
Dupont, L ;
Marcel, C ;
Maugy, C ;
Laïk, B ;
Rougier, A ;
Guéry, C ;
Tarascon, JM .
ELECTROCHIMICA ACTA, 2001, 46 (13-14) :2007-2013
[8]   Thermoelectric properties of homologous compounds in the ZnO-In2O3 system [J].
Ohta, H ;
Seo, WS ;
Koumoto, K .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1996, 79 (08) :2193-2196
[9]   High-temperature thermoelectric properties of (Zn1-xAlx)O [J].
Ohtaki, M ;
Tsubota, T ;
Eguchi, K ;
Arai, H .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (03) :1816-1818
[10]  
Tani T, 2001, J MATER CHEM, V11, P2324, DOI 10.1039/b101474i