Systematic study and performance optimization of transparent conducting indium-zinc oxides thin films

被引:46
作者
Naghavi, N [1 ]
Dupont, L [1 ]
Marcel, C [1 ]
Maugy, C [1 ]
Laïk, B [1 ]
Rougier, A [1 ]
Guéry, C [1 ]
Tarascon, JM [1 ]
机构
[1] Univ Picardie, Lab React & Chim Solides, UPRES A 6007, F-80039 Amiens, France
关键词
transparent conducting oxides; indium-zinc oxide; electrical properties; microstructural characterizations; electrochemical measurements;
D O I
10.1016/S0013-4686(01)00417-0
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
To optimize the physical properties of In2O3-ZnO pulsed laser deposited thin films, we embarked on a systematic study of their microstructural characterization and transport properties. We found that the electrical properties of the films are greatly governed by their microstructure, which evolves from granular to frber and to columnar textures, as we go from cubic In2O3 to hexagonal ZnO via ZnkIn2Ok+3 layered structure in the binary In2O3-ZnO phase diagram. Maximum conductivity is reached for a Zn/(Zn + In)= 0.5 (at.) composition having a layered ZnkIn2Ok+3-type structure with essentially k = 2, which was synthesized for the first time. Electrochemical measurements show that this film can be used as a transparent electrode in electrochromic devices operating either in an aqueous or organic medium. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:2007 / 2013
页数:7
相关论文
共 23 条
[1]  
COGAN SF, 1985, APPL OPTICS, V24, P15
[2]   Electrochemical and in situ x-ray diffraction studies of the reaction of lithium with tin oxide composites [J].
Courtney, IA ;
Dahn, JR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (06) :2045-2052
[3]   Electrochromic properties of ZnO thin films prepared by pulsed laser deposition [J].
Ding, F ;
Fu, ZW ;
Qin, QZ .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 1999, 2 (08) :418-419
[4]  
DUPONT L, IN PRESS J SOLID STA
[5]   A new transparent conducting oxide in the Ga2O3-In2O3-SnO2 system [J].
Edwards, DD ;
Mason, TO ;
Goutenoire, F ;
Poeppelmeier, KR .
APPLIED PHYSICS LETTERS, 1997, 70 (13) :1706-1708
[6]   INFLUENCE OF DEFECTS ON THE ELECTRONIC-STRUCTURE OF ZINC-OXIDE SURFACES [J].
GOPEL, W ;
LAMPE, U .
PHYSICAL REVIEW B, 1980, 22 (12) :6447-6462
[7]   DOPANT INDUCED MODIFICATIONS IN THE PHYSICAL-PROPERTIES OF SPRAYED ZNOIN FILMS [J].
GOYAL, DJ ;
AGASHE, C ;
TAKWALE, MG ;
BHIDE, VG ;
MAHAMUNI, S ;
KULKARNI, SK .
JOURNAL OF MATERIALS RESEARCH, 1993, 8 (05) :1052-1056
[8]   OPTICAL-PROPERTIES OF SPUTTER-DEPOSITED ZNO-AL THIN-FILMS [J].
JIN, ZC ;
HAMBERG, I ;
GRANQVIST, CG .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) :5117-5131
[9]   Preparation of transparent and conductive In2O3-ZnO films by radio frequency magnetron sputtering [J].
Minami, T ;
Kakumu, T ;
Takata, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (03) :1704-1708
[10]   New transparent conducting MgIn2O4-Zn2In2O5 thin films prepared by magnetron sputtering [J].
Minami, T ;
Takata, S ;
Kakumu, T ;
Sonohara, H .
THIN SOLID FILMS, 1995, 270 (1-2) :22-26