Laser doping in Si, InP and GaAs

被引：9

作者：

Pokhmurska, A ^{[1
]}

Bonchik, O ^{[1
]}

Kiyak, S ^{[1
]}

Savitski, G ^{[1
]}

Gloskovsky, A ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Appl Problems Mech & Math, UA-290601 Lviv, Ukraine

来源：

APPLIED SURFACE SCIENCE | 2000年 / 154卷

关键词：

semiconductor; device fabrication; CWCO2 laser irradiation; diffusion; doped layers;

D O I：

10.1016/S0169-4332(99)00470-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Experimental results on laser solid-phase doping of Si, GaAs and InP are presented. Using kW CO2 laser, we fabricated ultra-shallow p-n junctions and Ohmic contacts with these semiconductors. The impurity distribution into the depth of the doped layers has been studied through the Auger electron spectroscopy (AES). The zero-bias resistance of formed GaAs p-n junctions was similar to 10(10) Omega and a typical resistance of nonrectifying contacts with GaAs and InP was 5 . 10(-7) Omega . cm(2) and 5 . 10(-5) Omega . cm(2), respectively. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：712 / 715

页数：4

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