Effect of doping profile on the lifetime of green phosphorescent organic light-emitting diodes

被引：33

作者：

Lee, Jun Yeob ^{[1
]}

机构：

[1] Dankook Univ, Dept Polymer Sci & Engn, Seoul 140714, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 15期

关键词：

D O I：

10.1063/1.2360223

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lifetime of green phosphorescent light-emitting diodes was improved by using a graded doping structure in light-emitting layer. A green device with high doping concentration at the hole transport layer and light-emitting layer interface showed longer lifetime than a conventional device with uniform doping concentration for the whole light-emitting layer by more than 60%. (c) 2006 American Institute of Physics.

引用

页数：3

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